Walailak Frontier 01, August 2018
Smart materials are projected to form the basis of a range of future innovations. In the area of molecular switches, we are exploring molecular magnetic materials where the switching can be induced by changes in temperature, pressure or light irradiation and moreover, where the magnetic switching induces changes in the redox and optical properties of the material.
The need for high density data storage increases daily with faster, more energy efficient solutions constantly being sought. Spin crossover complexes are a class of materials that can display magnetic hysteresis making them attractive targets in developing the next generation of data storage devices. Researchers from FuNTech, Walailak University have recently discovered a new spin crossover material that exhibits a magnetic hysteresis of 34 K close to room temperature. The large hysteresis is driven by a unique change in the structure of the material and brings molecular data storage devices closer to reality.